MVDF2C03HDR2G【PDF 5/10 页】MOSFET COMPL 30V 4.1A 8-SOIC

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MMDF2C03HD

TYPICAL ELECTRICAL CHARACTERISTICS

100

V GS = 0 V

N ? Channel

T J = 125 ° C

1000

V GS = 0 V

P ? Channel

10

100 ° C

100

T J = 125 ° C

100 ° C

1

0

5

10

15

20

25

30

10

0

5

10

15

20

25

30

V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 6. Drain ? To ? Source Leakage

Current versus Voltage

V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 6. Drain ? To ? Source Leakage

Current versus Voltage

POWER MOSFET SWITCHING

Switching behavior is most easily modeled and predicted

by recognizing that the power MOSFET is charge

controlled. The lengths of various switching intervals ( D t)

are determined by how fast the FET input capacitance can

be charged by current from the generator.

The published capacitance data is difficult to use for

calculating rise and fall because drain ? gate capacitance

varies greatly with applied voltage. Accordingly, gate

charge data is used. In most cases, a satisfactory estimate of

average input current (I G(AV) ) can be made from a

rudimentary analysis of the drive circuit so that

t = Q/I G(AV)

During the rise and fall time interval when switching a

resistive load, V GS remains virtually constant at a level

known as the plateau voltage, V SGP . Therefore, rise and fall

times may be approximated by the following:

t r = Q 2 x R G /(V GG ? V GSP )

t f = Q 2 x R G /V GSP

where

V GG = the gate drive voltage, which varies from zero to V GG

R G = the gate drive resistance

and Q 2 and V GSP are read from the gate charge curve.

During the turn ? on and turn ? off delay times, gate current

is not constant. The simplest calculation uses appropriate

values from the capacitance curves in a standard equation for

voltage change in an RC network. The equations are:

t d(on) = R G C iss In [V GG /(V GG ? V GSP )]

The capacitance (C iss ) is read from the capacitance curve

at a voltage corresponding to the off ? state condition when

calculating t d(on) and is read at a voltage corresponding to the

on ? state when calculating t d(off) .

At high switching speeds, parasitic circuit elements

complicate the analysis. The inductance of the MOSFET

source lead, inside the package and in the circuit wiring

which is common to both the drain and gate current paths,

produces a voltage at the source which reduces the gate drive

current. The voltage is determined by Ldi/dt, but since di/dt

is a function of drain current, the mathematical solution is

complex. The MOSFET output capacitance also

complicates the mathematics. And finally, MOSFETs have

finite internal gate resistance which effectively adds to the

resistance of the driving source, but the internal resistance

is difficult to measure and, consequently, is not specified.

The resistive switching time variation versus gate

resistance (Figure 9) shows how typical switching

performance is affected by the parasitic circuit elements. If

the parasitics were not present, the slope of the curves would

maintain a value of unity regardless of the switching speed.

The circuit used to obtain the data is constructed to minimize

common inductance in the drain and gate circuit loops and

is believed readily achievable with board mounted

components. Most power electronic loads are inductive; the

data in the figure is taken with a resistive load, which

approximates an optimally snubbed inductive load. Power

MOSFETs may be safely operated into an inductive load;

however, snubbing reduces switching losses.

t d(off) = R G C iss In (V GG /V GSP )

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